Enhanced Light Extraction of Nano‐Light‐Emitting Diodes with Metal‐Clad Structure Using Vertical GaAs/GaAsP Core–Multishell Nanowires on Si Platform

Nanometer-scaled light sources using III–V compound semiconductor nanowires (NWs) on Si are expected as building blocks for next-generation photonics, bioimaging, on-chip microscopy, and detection ranging (LiDAR) techniques. This is, however, limited in a few materials systems due to complexity integration of the vertical NWs device process flow. Suppressing optical loss NW beyond diffraction remains difficult enhancing extraction. Herein, effect metal-clad architectures nano-light-emitting diodes (LEDs) GaAs/GaAsP-related core–multishell heterogeneously integrated is investigated. The grown composed radial n-GaAs/n-GaAsP/p-GaAs/p-GaAsP double heterostructure. NW-LEDs show suppression carrier overflow rapid enhancement electrical luminescence.